SiC FETs: Easily Driving Higher Power Density
Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices (wide bandgap) is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost versus silicon MOSFETs and other silicon carbide MOSFETs.
조회수 376회
PDF 다운로드
회원 정보 수정